EXCIMER-LASER ETCHING ON SILICON

被引:44
作者
HORIIKE, Y
HAYASAKA, N
SEKINE, M
ARIKADO, T
NAKASE, M
OKANO, H
机构
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1987年 / 44卷 / 04期
关键词
D O I
10.1007/BF00624598
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:313 / 322
页数:10
相关论文
共 25 条
[1]  
ARIKADO T, 1984, MATER RES SOC S P, V29, P167
[2]  
Cabrera N., 1949, REP PROG PHYS, V12, P308
[3]  
CHAUNG TJ, 1983, SURF SCI REP, V3, P1
[4]   MECHANISM INVESTIGATIONS OF A PULSED LASER-LIGHT INDUCED DESORPTION [J].
GAUTHIER, R ;
GUITTARD, C .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 38 (02) :477-486
[5]   PHOTO-ASSISTED ANISOTROPIC ETCHING OF PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON EMPLOYING REACTIVE SPECIES GENERATED BY A MICROWAVE-DISCHARGE [J].
HAYASAKA, N ;
OKANO, H ;
SEKINE, M ;
HORIIKE, Y .
APPLIED PHYSICS LETTERS, 1986, 48 (17) :1165-1166
[6]  
HAYASAKA N, UNPUB
[7]  
HAYASAKA N, UNPUB APPL PHYS LETT
[8]  
HIROSE M, 1985, COMMUNICATION
[9]  
HORIIKE Y, 1977, SEMICONDUCTOR SILICO, P1071
[10]  
HORIIKE Y, 1984, VLSI ELECT MICROSTRU, V8, P448