INFLUENCE OF TRAPPING AND DETRAPPING EFFECTS IN SI(LI), GE(LI) AND CDTE DETECTORS

被引：22

作者：

MAYER, JW

ZANIO, KR

MARTIN, M

FOWLER, IL

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1970年 / NS17卷 / 03期

关键词：

D O I：

10.1109/TNS.1970.4325694

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：221 / +

页数：1

共 64 条

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[2]

ALBERIGI A, 1968, SEMICONDUCTOR DETECT, pCH1

[3]

ALBERIGIQUARANT.A, 1965, PHYS LETT, V17, P102

[4]

[Anonymous], 1968, SEMICONDUCTOR DETECT

[5]

ARKADEVA EN, 1966, SOV PHYS TECH PHYS-U, V11, P846

[6]

ARKADEVA EN, 1967, SOV PHYS SEMICOND+, V1, P669

[7]

ARKADEVA EN, 1968, SOV PHYS SEMICOND+, V2, P235

[8] BEMERKUNG ZU DEN LADUNGSVERLUSTEN IN SPERRSCHICHTZAHLERN [J].

BALDINGER, E .

ZEITSCHRIFT FUR ANGEWANDTE MATHEMATIK UND PHYSIK, 1964, 15 (01) :90-&

[9] NUCLEAR DETECTORS FROM CADMIUM TELLURIDE GROWN FROM A TELLURIUM SOLVENT [J].

BELL, RO ;

HEMMAT, N ;

WALD, F .

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[10] SMALL-SIGNAL CURRENT TRANSIENTS IN INSULATORS WITH TRAPS [J].

BLAKNEY, RM ;

GRUNWALD, HP .

PHYSICAL REVIEW, 1967, 159 (03) :658-&

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