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INFLUENCE OF TRAPPING AND DETRAPPING EFFECTS IN SI(LI), GE(LI) AND CDTE DETECTORS

被引：22
作者：
MAYER, JW
ZANIO, KR
MARTIN, M
FOWLER, IL
机构：
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1970年 / NS17卷 / 03期
关键词：
D O I：
10.1109/TNS.1970.4325694
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：221 / +
页数：1
相关论文
共 64 条
[61]   CHARACTERIZATION OF FOREIGN ATOMS AND NATIVE DEFECTS IN SINGLE CRYSTALS OF CADMIUM TELLURIDE BY HIGH-TEMPERATURE CONDUCTIVITY MEASUREMENTS [J].
ZANIO, KR .
APPLIED PHYSICS LETTERS, 1969, 15 (08) :260-&
[62]   IMPROVED CDTE FOR GAMMA DETECTION BETWEEN -100 DEGREE C AND +100 DEGREE C [J].
ZANIO, KR .
APPLIED PHYSICS LETTERS, 1969, 14 (02) :56-+
[63]   TRANSIENT CURRENTS IN SEMI-INSULATING CDTE CHARACTERISTIC OF DEEP TRAPS [J].
ZANIO, KR ;
AKUTAGAWA, WM ;
KIKUCHI, R .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (06) :2818-+
[64]   CHARGE COLLECTION EFFICIENCIES FOR LITHIUM-DRIFTED SILICON AND GERMANIUM DETECTORS IN X-RAY ENERGY REGION [J].
ZULLIGER, HR ;
AITKEN, DW .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1968, NS15 (01) :466-&
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