IMPURITIES IN SINGLE-CRYSTAL INDIUM-PHOSPHIDE

[1] LEC GROWTH OF LARGE INP SINGLE-CRYSTALS [J]. JOURNAL OF CRYSTAL GROWTH, 1976, 33 (01) : 174 - 176

[2] ANTYPAS GA, 1977, 336 I PHYS C SER, P55

[3] BACHMAN KJ, 1975, 24 I PHYS C SER, P121

[4] DEVELOPMENTS IN WEIGHING METHOD OF AUTOMATIC CRYSTAL PULLING [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) : 369 - 373

[5] BASS SJ, 1979, COMMUNICATION

[6] CONCENTRATIONS OF CARBON AND OXYGEN IN INDIUM-PHOSPHIDE AND GALLIUM-ARSENIDE CRYSTALS GROWN BY LEC TECHNIQUE [J]. JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (04) : 401 - 413

[7] Brooks H., 1955, ADV ELECTRONICS ELEC, P158

[8] PHOTOCAPACITANCE EFFECTS OF DEEP TRAPS IN NORMAL-TYPE INP [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (01) : 466 - 468

[9] HOLE TRAPS IN N-INP BY DLTS AND TRANSIENT CAPACITANCE TECHNIQUES [J]. ELECTRONICS LETTERS, 1979, 15 (09) : 247 - 249

[10] ACCEPTOR EXCITED-STATES IN INDIUM-PHOSPHIDE [J]. SOLID STATE COMMUNICATIONS, 1979, 32 (05) : 379 - 384

[1] LEC GROWTH OF LARGE INP SINGLE-CRYSTALS [J]. JOURNAL OF CRYSTAL GROWTH, 1976, 33 (01) : 174 - 176

[2] ANTYPAS GA, 1977, 336 I PHYS C SER, P55

[3] BACHMAN KJ, 1975, 24 I PHYS C SER, P121

[4] DEVELOPMENTS IN WEIGHING METHOD OF AUTOMATIC CRYSTAL PULLING [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) : 369 - 373

[5] BASS SJ, 1979, COMMUNICATION

[6] CONCENTRATIONS OF CARBON AND OXYGEN IN INDIUM-PHOSPHIDE AND GALLIUM-ARSENIDE CRYSTALS GROWN BY LEC TECHNIQUE [J]. JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (04) : 401 - 413

[7] Brooks H., 1955, ADV ELECTRONICS ELEC, P158

[8] PHOTOCAPACITANCE EFFECTS OF DEEP TRAPS IN NORMAL-TYPE INP [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (01) : 466 - 468

[9] HOLE TRAPS IN N-INP BY DLTS AND TRANSIENT CAPACITANCE TECHNIQUES [J]. ELECTRONICS LETTERS, 1979, 15 (09) : 247 - 249

[10] ACCEPTOR EXCITED-STATES IN INDIUM-PHOSPHIDE [J]. SOLID STATE COMMUNICATIONS, 1979, 32 (05) : 379 - 384