LOCAL-FIELD CORRECTIONS TO SURFACE AND INTERFACE CORE-LEVEL SHIFTS IN INSULATORS

被引：15

作者：

ROTENBERG, E ^{[1
]}

OLMSTEAD, MA ^{[1
]}

机构：

[1] UNIV WASHINGTON,DEPT PHYS,SEATTLE,WA 98195

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.46.12884

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a model for the extra-atomic contributions to core-level shifts in insulating thin films on polarizable substrates. The final-state shift is calculated from the screening-dependent local fields at a photoemitting atom and shown to be comparable to the initial-state Madelung potential shift in polar crystals. For Xe(111) films, our model completely accounts for experimental results. For NaCl(100) and CaF2(111) surfaces, we present predictions of surface core-level shifts for simple bulk terminations. We discuss corrections which can be incorporated into our model.

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页码：12884 / 12887

页数：4

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