SCATTERING PROBABILITIES FOR HOLES .1. DEFORMATION POTENTIAL AND IONIZED IMPURITY SCATTERING MECHANISMS

被引：70

作者：

COSTATO, M ^{[1
]}

REGGIANI, L ^{[1
]}

机构：

[1] UNIV MODENA,IST FIS,MODENA,ITALY

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1973年 / 58卷 / 02期

关键词：

D O I：

10.1002/pssb.2220580206

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：471 / 482

页数：12

共 30 条

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[4] BIR GL, 1961, SOV PHYS-SOL STATE, V2, P2039
[5] Conwell E. M., 1967, SOLID STATE PHYSIC S, V9, P108
[6] CONWELL EM, 1967, SOLID STATE PHYS S, V9, P150
[7] NONPOLAR-LATTICE SCATTERING FOR HOLES IN CUBIC SEMICONDUCTORS
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[J]. LETTERE AL NUOVO CIMENTO, 1972, 4 (05): : 171 - &
[8] HOLE TRANSPORT IN POLAR SEMICONDUCTORS
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REGGIANI, L
JACOBONI, C
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1972, 52 (02): : 461 - &
[9] ELECTRON-ACOUSTIC-PHONON SCATTERING MECHANISMS AT LOW TEMPERATURES IN SEMICONDUCTORS
COSTATO, M
REGGIANI, L
[J]. LETTERE AL NUOVO CIMENTO, 1970, 4 (25): : 1179 - &
[10] TEMPERATURE-DEPENDENCE OF COMBINED EFFECTIVE MASS OF HOLES IN SILICON
COSTATO, M
REGGIANI, L
[J]. LETTERE AL NUOVO CIMENTO, 1970, 3 (08): : 239 - &