ON TEMPERATURE DEPENDENCE OF HOLE MOBILITY IN SILICON

被引：45

作者：

ASCHE, M

VONBORZE.J

机构：

来源：

PHYSICA STATUS SOLIDI | 1970年 / 37卷 / 01期

关键词：

D O I：

10.1002/pssb.19700370148

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

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页码：433 / &

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