CONDUCTION-BAND STRUCTURES OF GAAS AND INP

被引：60

作者：

PITT, GD ^{[1
]}

机构：

[1] STAND TELECOMMUN LABS LTD, HARLOW, ESSEX, ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1973年 / 6卷 / 09期

关键词：

D O I：

10.1088/0022-3719/6/9/016

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1586 / 1593

页数：8

共 36 条

[1] OPTICAL ABSORPTION DUE TO INTER-CONDUCTION-MINIMUM TRANSITIONS IN GALLIUM ARSENIDE [J].

BALSLEV, I .

PHYSICAL REVIEW, 1968, 173 (03) :762-&

[2] ELECTRICAL PROPERTIES OF N-TYPE EPITAXIAL GAAS AT HIGH-TEMPERATURES [J].

BLOOD, P .

PHYSICAL REVIEW B, 1972, 6 (06) :2257-&

[3] BAND STRUCTURE OF SEVERAL ZINC-BLENDE SEMICONDUCTORS FROM A SELF-CONSISTENT PSEUDOPOTENTIAL APPROACH [J].

BRUST, D .

SOLID STATE COMMUNICATIONS, 1971, 9 (08) :481-&

[4] CALCULATION OF ENERGY-BAND PRESSURE COEFFICIENTS FROM DIELECTRIC THEORY OF CHEMICAL BOND [J].

CAMPHAUSEN, DL ;

CONNELL, GAN ;

PAUL, W .

PHYSICAL REVIEW LETTERS, 1971, 26 (04) :184-+

[5] ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J].

CARDONA, M ;

SHAKLEE, KL ;

POLLAK, FH .

PHYSICAL REVIEW, 1967, 154 (03) :696-+

[6] INTRINSIC OPTICAL ABSORPTION OF GALLIUM PHOSPHIDE BETWEEN 2.33 AND 3.12 EV [J].

DEAN, PJ ;

KAMINSKY, G ;

ZETTERSTROM, RB .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) :3551-+

[7] INTRABAND AND INTERBAND FREE-CARRIER ABSORPTION AND FUNDAMENTAL ABSORPTION EDGE IN N-TYPE INP [J].

DUMKE, WP ;

LORENZ, MR ;

PETTIT, GD .

PHYSICAL REVIEW B, 1970, 1 (12) :4668-&

[8] MAGNETOPHONON EFFECT IN EPITAXIAL FILMS OF TYPE INP [J].

EAVES, L ;

STRADLIN.RA ;

ASKENAZY, S ;

LEOTIN, J ;

PORTAL, JC ;

ULMET, JP .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (02) :L42-+

[9] EXPERIMENTAL EVIDENCE FOR OPTICAL POPULATION OF X MINIMA IN GAAS [J].

EDEN, RC ;

MOLL, JL ;

SPICER, WE .

PHYSICAL REVIEW LETTERS, 1967, 18 (15) :597-&

[10] EFFECT OF PRESSURE ON ABSORPTION EDGES OF SOME III-V, II-VI, AND I-VII COMPOUNDS [J].

EDWARDS, AL ;

DRICKAMER, HG .

PHYSICAL REVIEW, 1961, 122 (04) :1149-&

← 1 2 3 4 →