LANTHANUM-MAGNESIUM AND LANTHANUM-MANGANESE DONOR-ACCEPTOR-CODOPED SEMICONDUCTING BARIUM-TITANATE

被引:75
作者
TING, CJ
PENG, CJ
LU, HY
WU, ST
机构
[1] Materials Research Laboratories, Industrial Technology Research Institute, Chutung
关键词
barium titanate; lanthanum; magnesium; manganese; semiconductors;
D O I
10.1111/j.1151-2916.1990.tb06514.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
BaTiO3 powder doped with La donor and codoped with Mn or Mg acceptor was sintered at 1350°C/1 h in air. For Ladoped BaTiO3, the room‐temperature resistivity decreased to a minimum at [La3+] ∼ 0.15 mol%. For La‐Mn‐codoped BaTiO3, the minimum resistivity occurred at [La3+] ‐ 2[Mn2+] ∼ 0.15 mol%. When the ceramic was changed to a fine‐grained insulator by high donor doping ([La3+] >0.15 mol%), its semiconductivity was restored, and the relatively homogeneous, coarse‐grained microstructure recurred by codoping with either Mg or Mn acceptor, with the transition at [La3+] ‐ 2[Mg2+] = 0.15 mol% or [La3+] ‐ 2[Mn2+] = 0.15 mol%. The analogy of a compensation effect between La‐Mn‐ and La‐Mg‐codoped BaTiO3 suggested that Mn acceptor added to BaTiO3 exists as Mn2+ ion in the bulk grain region; its influence on the positive temperature coefficient of resistivity behavior is then discussed. Copyright © 1990, Wiley Blackwell. All rights reserved
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页码:329 / 334
页数:6
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