PROTON-BOMBARDMENT ISOLATED GAALAS-GAAS CHARGE-COUPLED-DEVICES

[1] IMAGING DEVICES USING CHARGE-COUPLED CONCEPT [J]. PROCEEDINGS OF THE IEEE, 1975, 63 (01) : 38 - 67

[2] GAAS CHARGE-COUPLED-DEVICES [J]. APPLIED PHYSICS LETTERS, 1978, 32 (06) : 383 - 385

[3] OPTICAL AND ELECTRICAL PROPERTIES OF PROTON-BOMBARDED P-TYPE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 207 - 213

[4] PROTON-BOMBARDMENT FORMATION OF STRIPE-GEOMETRY HETEROSTRUCTURE LASERS FOR 300 K CW OPERATION [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (06): : 726 - &

[5] ELECTRICAL PROPERTIES OF PROTON-BOMBARDED GA1-XALXAS [J]. APPLIED PHYSICS LETTERS, 1973, 23 (10) : 546 - 547

[6] ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M [J]. APPLIED PHYSICS LETTERS, 1976, 28 (12) : 709 - 711

[7] LIU YZ, 1979, P IEDM, P622

[8] SPEIGHT JD, 1977, 33 I PHYS C SER A, P275

[9] STILLMAN GE, 1975, 24 I PHYS C SER, P210

[1] IMAGING DEVICES USING CHARGE-COUPLED CONCEPT [J]. PROCEEDINGS OF THE IEEE, 1975, 63 (01) : 38 - 67

[2] GAAS CHARGE-COUPLED-DEVICES [J]. APPLIED PHYSICS LETTERS, 1978, 32 (06) : 383 - 385

[3] OPTICAL AND ELECTRICAL PROPERTIES OF PROTON-BOMBARDED P-TYPE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 207 - 213

[4] PROTON-BOMBARDMENT FORMATION OF STRIPE-GEOMETRY HETEROSTRUCTURE LASERS FOR 300 K CW OPERATION [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (06): : 726 - &

[5] ELECTRICAL PROPERTIES OF PROTON-BOMBARDED GA1-XALXAS [J]. APPLIED PHYSICS LETTERS, 1973, 23 (10) : 546 - 547

[6] ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M [J]. APPLIED PHYSICS LETTERS, 1976, 28 (12) : 709 - 711

[7] LIU YZ, 1979, P IEDM, P622

[8] SPEIGHT JD, 1977, 33 I PHYS C SER A, P275

[9] STILLMAN GE, 1975, 24 I PHYS C SER, P210