IMAGING DEVICES USING CHARGE-COUPLED CONCEPT

被引：178

作者：

BARBE, DF ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

关键词：

D O I：

10.1109/PROC.1975.9707

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：38 / 67

页数：30

共 37 条

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[3] EFFECTS OF GAMMA-RADIATION ON CHARGE-COUPLED DEVICES [J].

BARBE, DF ;

KILLIANY, JM ;

HUGHES, HL .

[4] CHARGE COUPLED SEMICONDUCTOR DEVICES [J].

BOYLE, WS ;

SMITH, GE .

BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (04) :587-+

[5]

CAMPANA SB, 1974, SEP CCD APPL C ED

[6]

CAMPANA SB, 1973 P CCD APPL C, P235

[7] FAST INTERFACE-STATE LOSSES IN CHARGE-COUPLED DEVICES [J].

CARNES, JE ;

KOSONOCKY, WF .

[8]

CARNES JE, 1972, RCA REV, V33, P327

[9]

CARNES JE, 1974, SOLID STATE TECHNOL, V17, P67

[10]

CHEEK TF, 1973 P CCD APPL C, P127