IMAGING DEVICES USING CHARGE-COUPLED CONCEPT

被引：178

作者：

BARBE, DF ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

PROCEEDINGS OF THE IEEE | 1975年 / 63卷 / 01期

关键词：

D O I：

10.1109/PROC.1975.9707

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：38 / 67

页数：30

共 37 条

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[20] EFFECTS OF RADIATION ON BURIED-CHANNEL CCDS WITH DOPED POLYSILICON GATES AND UNDOPED POLYSILICON INTERELECTRODE ISOLATION [J].

KILLIANY, JM ;

SAKS, NS ;

BAKER, WD ;

BARBE, DF .

APPLIED PHYSICS LETTERS, 1974, 24 (10) :506-508

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