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FIELD EFFECT TRANSISTORS ON EPITAXIAL GAAS AS TRANSDUCERS FOR ACOUSTIC SURFACE WAVES

被引：6
作者：
BRUUN, M
LUDVIK, S
QUATE, CF
机构：
来源：
APPLIED PHYSICS LETTERS | 1971年 / 18卷 / 04期
关键词：
D O I：
10.1063/1.1653589
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：118 / &
相关论文
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[2]   PROPAGATION OF PIEZOELECTRIC SURFACE WAVES ON CUBIC AND HEXAGONAL CRYSTALS [J].
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[3]  
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[4]  
HOOPER WW, 1967, P IEEE, V55, P1232
[5]   SILICON AND GALLIUM ARSENIDE FIELD-EFFECT TRANSISTORS WITH SCHOTTKY-BARRIER GATE [J].
STATZ, H ;
VONMUNCH, W .
SOLID-STATE ELECTRONICS, 1969, 12 (02) :111-&
[6]   MEASURED AND CALCULATED SURFACE-WAVE VELOCITIES [J].
VOLTMER, FW ;
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FARNELL, GW .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (09) :1634-+
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