2 BAND MODEL FOR NEGATIVE MAGNETORESISTANCE IN HEAVILY DOPED SEMICONDUCTORS

被引：32

作者：

HEDGCOCK, FT

RAUDORF, TW

机构：

来源：

SOLID STATE COMMUNICATIONS | 1970年 / 8卷 / 22期

关键词：

D O I：

10.1016/0038-1098(70)90324-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1819 / &

共 12 条

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[9] THEORY OF LOCALIZED SPINS AND NEGATIVE MAGNETORESISTANCE IN METALLIC IMPURITY CONDUCTION [J].

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[10] ELECTRIC CONDUCTION IN PHOSPHORUS DOPED SILICON AT LOW TEMPERATURES [J].

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