UNDERCUTTING PHENOMENA IN AL PLASMA-ETCHING

[1] BERSIN RL, 1978, SOLID STATE TECHNOL, V21, P117

[2] HEINECKE RAH, 1978, SOLID STATE TECHNOL, V21, P104

[3] POULSEN RG, 1976, DEC P INT EL DEV M W, P205

[4] PREFERENTIAL LATERAL CHEMICAL ETCHING IN REACTIVE ION ETCHING OF ALUMINUM AND ALUMINUM-ALLOYS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 377 - 380

[5] REACTIVE ION ETCHING OF ALUMINUM AND ALUMINUM-ALLOYS IN AN RF PLASMA CONTAINING HALOGEN SPECIES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 334 - 337

[6] ANALYSIS OF IMAGING ACCURACY IN REACTIVE ION ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 338 - 340

[1] BERSIN RL, 1978, SOLID STATE TECHNOL, V21, P117

[2] HEINECKE RAH, 1978, SOLID STATE TECHNOL, V21, P104

[3] POULSEN RG, 1976, DEC P INT EL DEV M W, P205

[4] PREFERENTIAL LATERAL CHEMICAL ETCHING IN REACTIVE ION ETCHING OF ALUMINUM AND ALUMINUM-ALLOYS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 377 - 380

[5] REACTIVE ION ETCHING OF ALUMINUM AND ALUMINUM-ALLOYS IN AN RF PLASMA CONTAINING HALOGEN SPECIES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 334 - 337

[6] ANALYSIS OF IMAGING ACCURACY IN REACTIVE ION ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 338 - 340