ANALYSIS OF IMAGING ACCURACY IN REACTIVE ION ETCHING

被引:7
作者
UKAI, K
HANAZAWA, K
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 02期
关键词
Compendex;
D O I
10.1116/1.569541
中图分类号
O59 [应用物理学];
学科分类号
摘要
ETCHING
引用
收藏
页码:338 / 340
页数:3
相关论文
共 6 条
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[3]  
HANAZAWA K, 1977, IECE JPN TECH REP, V76, P23
[4]  
KOBER H, 1957, DICT CONFORMAL REPRE, P161
[5]   PREFERENTIAL SIO2 ETCHING ON SI SUBSTRATE BY PLASMA REACTIVE SPUTTER ETCHING [J].
MATSUO, S ;
TAKEHARA, Y .
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[6]  
POULSEN RG, 1976, J VAC SCI TECHNOL, V13, P205