DRY PROCESS TECHNOLOGY (REACTIVE ION ETCHING)

[1] NEW UNDERCUTTING PHENOMENON IN PLASMA ETCHING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (11) : 1825 - 1826

[2] August Herbert Heinecke R, 1976, US Patent, Patent No. 3940506

[3] BONDUR JA, UNPUBLISHED

[4] CLARK HA, 1976, SOLID STATE TECHNOL, V19, P51

[5] RF SPUTTER ETCHING - A UNIVERSAL ETCH [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) : 100 - &

[6] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1146 - 1147

[7] Hosokawa N, 1974, JPN J APPL PHYS S, V13, P435

[8] KELLER J, 1975, P KODAK SEMINAR

[9] MA W, UNPUBLISHED

[10] Reinberg A. R., 1973, US patent, Patent No. [3,757,733, 3757733]

[1] NEW UNDERCUTTING PHENOMENON IN PLASMA ETCHING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (11) : 1825 - 1826

[2] August Herbert Heinecke R, 1976, US Patent, Patent No. 3940506

[3] BONDUR JA, UNPUBLISHED

[4] CLARK HA, 1976, SOLID STATE TECHNOL, V19, P51

[5] RF SPUTTER ETCHING - A UNIVERSAL ETCH [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) : 100 - &

[6] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1146 - 1147

[7] Hosokawa N, 1974, JPN J APPL PHYS S, V13, P435

[8] KELLER J, 1975, P KODAK SEMINAR

[9] MA W, UNPUBLISHED

[10] Reinberg A. R., 1973, US patent, Patent No. [3,757,733, 3757733]