NEW UNDERCUTTING PHENOMENON IN PLASMA ETCHING

被引:16
作者
ABE, H [1 ]
机构
[1] MITSUBISHI ELECTR CORP,CENT RES LAB,HYOGO,JAPAN
关键词
D O I
10.1143/JJAP.14.1825
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1825 / 1826
页数:2
相关论文
共 2 条
[1]   ETCHING CHARACTERISTICS OF SILICON AND ITS COMPOUNDS BY GAS PLASMA [J].
ABE, H ;
SONOBE, Y ;
ENOMOTO, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (01) :154-155
[2]   WALL PROFILES PRODUCED DURING PHOTORESIST MASKED ISOTROPIC ETCHING [J].
BRANDES, RG ;
DUDLEY, RH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) :140-142