INFLUENCE OF MASK MATERIALS ON ION-ETCHED STRUCTURES

被引：18

作者：

DIMIGEN, H ^{[1
]}

LUTHJE, H ^{[1
]}

HUBSCH, H ^{[1
]}

CONVERTINI, U ^{[1
]}

机构：

[1] PHILIPS FORSCH LAB HAMBURG GMBH,D-2000 HAMBURG 54,FED REP GER

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1976年 / 13卷 / 04期

关键词：

Compendex;

D O I：

10.1116/1.569033

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SEMICONDUCTOR DEVICE MANUFACTURE

引用

收藏

页码：976 / 980

页数：5

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