WET SILYLATION AND DRY DEVELOPMENT WITH THE AZ-5214(TM) PHOTORESIST

被引:8
作者
GOGOLIDES, E
TSOI, E
NASSIOPOULOS, AG
HATZAKIS, M
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 06期
关键词
D O I
10.1116/1.586011
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A positive tone surface imaging process using wet silylation and dry development of AZ 5214(TM) photoresist was developed. The process steps are spinning and prebake of the photoresist, i-line exposure, postexposure bake, wet silylation, and dry development in O2 plasma. The process has been developed using statistically designed experiments, starting with a Placket-Burman screening experimental design for six variables. These experiments showed that the composition of the silylating solution was the most important variable. As a result, a mixture experimental design followed, with the concentrations of the silylating agent and solvents as the only variables. Characterization of the process and process window definition were done with ultraviolet spectroscopy of films made on quartz wafers, and scanning electron microscope photographs.
引用
收藏
页码:2610 / 2614
页数:5
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