SILYLATION PROCESSES BASED ON ULTRAVIOLET LASER-INDUCED CROSS-LINKING

被引：26

作者：

HARTNEY, MA

ROTHSCHILD, M

KUNZ, RR

EHRLICH, DJ

SHAVER, DC

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 06期

关键词：

D O I：

10.1116/1.585100

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This report describes a positive-tone silylation process which results from crosslinking by exposure of novolac-based resists to deep-UV excimer laser irradiation. Comparison of 193 and 248 nm irradiation shows that the former leads to more efficient crosslinking. The dependence of silylation on time, temperature and pressure was studied in order to investigate the mechanism of the diffusion process. Evidence of both standard diffusion and non-Fickian behavior was found. Additionally, diffusion of the silylating agent in patterned resist was determined to be anisotropic.

引用

页码：1476 / 1480

页数：5

共 21 条

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