ANOMALOUS BEHAVIOR OF NITROGEN IN PULLED GAP CRYSTALS

[1] [Anonymous], 1970, J LUMIN, DOI DOI 10.1016/0022-2313(70)90054-2

[2] BASS SJ, 1968, CRYSTAL GROWTH, V3, P286

[3] OPTICAL PROPERTIES OF GROUP 4 ELEMENTS CARBON AND SILICON IN GALLIUM PHOSPHIDE [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) : 5631 - &

[4] FROSCH CJ, 1966, 1966 P INT C CRYST G

[5] LIGHTOWLERS EC, PRIVATE COMMUNICATIO

[6] EFFICIENT GREEN ELECTROLUMINESCENCE IN NITROGEN-DOPED GAP P-N JUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1968, 13 (04) : 139 - &

[7] NYGREN SF, TO BE PUBLISHED

[8] ISOELECTRONIC TRAPS DUE TO NITROGEN IN GALLIUM PHOSPHIDE [J]. PHYSICAL REVIEW, 1966, 150 (02): : 680 - &

[9] ISOELECTRONIC TRAPS DUE TO NITROGEN IN GALLIUM PHOSPHIDE [J]. PHYSICAL REVIEW LETTERS, 1965, 15 (22) : 857 - &

[10] SOLUTION GROWTH OF NITROGEN DOPED GALLIUM PHOSPHIDE CRYSTALS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (03) : 433 - &

[1] [Anonymous], 1970, J LUMIN, DOI DOI 10.1016/0022-2313(70)90054-2

[2] BASS SJ, 1968, CRYSTAL GROWTH, V3, P286

[3] OPTICAL PROPERTIES OF GROUP 4 ELEMENTS CARBON AND SILICON IN GALLIUM PHOSPHIDE [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) : 5631 - &

[4] FROSCH CJ, 1966, 1966 P INT C CRYST G

[5] LIGHTOWLERS EC, PRIVATE COMMUNICATIO

[6] EFFICIENT GREEN ELECTROLUMINESCENCE IN NITROGEN-DOPED GAP P-N JUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1968, 13 (04) : 139 - &

[7] NYGREN SF, TO BE PUBLISHED

[8] ISOELECTRONIC TRAPS DUE TO NITROGEN IN GALLIUM PHOSPHIDE [J]. PHYSICAL REVIEW, 1966, 150 (02): : 680 - &

[9] ISOELECTRONIC TRAPS DUE TO NITROGEN IN GALLIUM PHOSPHIDE [J]. PHYSICAL REVIEW LETTERS, 1965, 15 (22) : 857 - &

[10] SOLUTION GROWTH OF NITROGEN DOPED GALLIUM PHOSPHIDE CRYSTALS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (03) : 433 - &