ISOELECTRONIC TRAPS DUE TO NITROGEN IN GALLIUM PHOSPHIDE

[1] THE EPITAXIAL GROWTH OF GAP BY A GA2O VAPOR TRANSPORT MECHANISM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (02) : 180 - 184

[2] GROSS EF, 1964, DOKL AKAD NAUK SSSR+, V154, P64

[3] GROSS EF, 1964, SOVIET PHYSICSDOKLAD, V9, P38

[4] BOUND EXCITONS IN GAP [J]. PHYSICAL REVIEW, 1963, 131 (06): : 2397 - &

[1] THE EPITAXIAL GROWTH OF GAP BY A GA2O VAPOR TRANSPORT MECHANISM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (02) : 180 - 184

[2] GROSS EF, 1964, DOKL AKAD NAUK SSSR+, V154, P64

[3] GROSS EF, 1964, SOVIET PHYSICSDOKLAD, V9, P38

[4] BOUND EXCITONS IN GAP [J]. PHYSICAL REVIEW, 1963, 131 (06): : 2397 - &