BOUND EXCITONS IN GAP

被引：174

作者：

THOMAS, DG

HOPFIELD, JJ

GERSHENZON, M

机构：

来源：

PHYSICAL REVIEW | 1963年 / 131卷 / 06期

关键词：

D O I：

10.1103/PhysRev.131.2397

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2397 / &

共 10 条

[1] MIRROR ABSORPTION AND FLUORESCENCE IN ZNTE [J].

DIETZ, RE ;

HOPFIELD, JJ ;

THOMAS, DG .

PHYSICAL REVIEW LETTERS, 1962, 8 (10) :391-&

[2] BAND STRUCTURE AND TRANSPORT PROPERTIES OF SOME 3-5 COMPOUNDS [J].

EHRENREICH, H .

JOURNAL OF APPLIED PHYSICS, 1961, 32 :2155-&

[3] LIGHT EMISSION FROM FORWARD BIASED P-N JUNCTIONS IN GALLIUM PHOSPHIDE [J].

GERSHENZON, M ;

MIKULYAK, RM .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :313-&

[4]

GERSHENZON M, 1962, P INT C PHYS SEMICON, P752

[5] P-N-JUNCTION PHOTOVOLTAIC EFFECT IN ZINC-DOPED GAP [J].

GRIMMEISS, HG ;

KISCHIO, W ;

KOELMANS, H .

SOLID-STATE ELECTRONICS, 1962, 5 (MAY-J) :155-159

[6] PAIR SPECTRA IN GAP [J].

HOPFIELD, JJ ;

GERSHENZON ;

THOMAS, DG .

PHYSICAL REVIEW LETTERS, 1963, 10 (05) :162-&

[7] INFRARED LATTICE ABSORPTION OF GAP [J].

KLEINMAN, DA ;

SPITZER, WG .

PHYSICAL REVIEW, 1960, 118 (01) :110-117

[8] OPTICAL ABSORPTION IN N-TYPE GALLIUM PHOSPHIDE [J].

SPITZER, WG ;

GERSHENZON, M ;

FROSCH, CJ ;

GIBBS, DF .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 11 (3-4) :339-341

[9] OPTICAL PROPERTIES OF BOUND EXCITON COMPLEXES IN CADMIUM SULFIDE [J].

THOMAS, DG ;

HOPFIELD, JJ .

PHYSICAL REVIEW, 1962, 128 (05) :2135-&

[10] ZEEMAN EFFECT OF BOUND EXCITONS IN GALLIUM PHOSPHIDE [J].

YAFET, Y ;

THOMAS, DG .

PHYSICAL REVIEW, 1963, 131 (06) :2405-&

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