LIGHT EMISSION FROM FORWARD BIASED P-N JUNCTIONS IN GALLIUM PHOSPHIDE

[1] COTTRELL TL, 1958, STRENGTHS CHEMICAL B, pCH9

[2] DASH WC, 1958, GROWTH PERFECTION CR, P352

[3] PRESENCE OF CARBON IN GALLIUM PHOSPHIDE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (10) : 2060 - &

[4] THE PREPARATION AND FLOATING ZONE PROCESSING OF GALLIUM PHOSPHIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (03) : 251 - 257

[5] FROSCH CJ, 1961, FAL EL SOC M DETR

[6] FULLER CS, 1959, SEMICONDUCTORS, P192

[7] ELECTROLUMINESCENCE AT P-N JUNCTIONS IN GALLIUM PHOSPHIDE [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (07) : 1338 - &

[8] VAPOR PHASE PREPARATION OF GALLIUM PHOSPHIDE CRYSTALS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (06) : 548 - 551

[9] GERSHENZON M, 1961, SPR EL SOC M IND

[10] GERSHENZON M, UNPUB

[1] COTTRELL TL, 1958, STRENGTHS CHEMICAL B, pCH9

[2] DASH WC, 1958, GROWTH PERFECTION CR, P352

[3] PRESENCE OF CARBON IN GALLIUM PHOSPHIDE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (10) : 2060 - &

[4] THE PREPARATION AND FLOATING ZONE PROCESSING OF GALLIUM PHOSPHIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (03) : 251 - 257

[5] FROSCH CJ, 1961, FAL EL SOC M DETR

[6] FULLER CS, 1959, SEMICONDUCTORS, P192

[7] ELECTROLUMINESCENCE AT P-N JUNCTIONS IN GALLIUM PHOSPHIDE [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (07) : 1338 - &

[8] VAPOR PHASE PREPARATION OF GALLIUM PHOSPHIDE CRYSTALS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (06) : 548 - 551

[9] GERSHENZON M, 1961, SPR EL SOC M IND

[10] GERSHENZON M, UNPUB