LIGHT EMISSION FROM FORWARD BIASED P-N JUNCTIONS IN GALLIUM PHOSPHIDE

被引：64

作者：

GERSHENZON, M

MIKULYAK, RM

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(62)90113-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：313 / &

共 36 条

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[13] SOME PROPERTIES OF P-N JUNCTIONS IN GAP
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[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 : 2123 - &
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KOELMANS, H
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