DIELECTRIC AND FERROELECTRIC PROPERTIES OF BATIO3 THIN-FILMS GROWN BY THE SOL-GEL PROCESS

被引：108

作者：

KAMALASANAN, MN

KUMAR, ND

CHANDRA, S

机构：

[1] National Physical Laboratory, New Delhi 110012, Dr. K. S. Krishnan Road

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 09期

关键词：

D O I：

10.1063/1.354183

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transparent smooth and crack-free BaTiO3 thin films were deposited on stainless steel, fused silica, platinum plates, and platinized silicon wafers (100) using the sol-gel process. Barium 2-ethyl hexanoate and titanium isopropoxide were used as precursors. Annealing of the films at 750-degrees-C for 2 h was necessary to get polycrystalline films. The electrical properties of the films prepared on stainless-steel substrates showed an electrode barrier effect whereas those prepared on platinum substrates were susceptible to ambient atmospheric humidity. However, films grown on platinum substrates and measured under dry conditions showed very good electrical properties. Ferroelectric hysteresis and C-V characteristics were also studied on these films.

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页码：5679 / 5687

页数：9

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