MODELING OF INGAAS/INALAS COUPLED DOUBLE-QUANTUM WELLS

被引:10
作者
CHIN, MK
机构
[1] School of Electrical and Electronic Engineering, Nanyang Technological University
关键词
D O I
10.1063/1.357104
中图分类号
O59 [应用物理学];
学科分类号
摘要
A symmetric coupled double-quantum-well (CDQW) structure in InGaAs/InAlAs lattice matched to InP can give enhanced Stark effects for electroabsorption modulation near 1.3 mum. The optical features of this material are the dramatic quenching of the heavy-hole exciton and the simultaneous emergence of the normally forbidden higher-order transitions. An effective-mass model for the double-quantum-well structure yields predictions in good agreement with experimental results. The model can be used to predict the optical properties of not only symmetric CDQWs but also asymmetric structures as well.
引用
收藏
页码:518 / 523
页数:6
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