ENHANCEMENT OF THE STARK-EFFECT IN COUPLED QUANTUM WELLS FOR OPTICAL SWITCHING DEVICES

被引：28

作者：

AHN, D ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, DIV RES, YORKTOWN HTS, NY 10598 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1989年 / 25卷 / 11期

关键词：

D O I：

10.1109/3.42054

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2260 / 2265

页数：6

共 22 条

[1] MODEL OF THE FIELD-EFFECT QUANTUM-WELL LASER WITH FREE-CARRIER SCREENING AND VALENCE BAND MIXING
AHN, D
CHUANG, SL
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (11) : 6143 - 6149
[2] A FIELD-EFFECT QUANTUM-WELL LASER WITH LATERAL CURRENT INJECTION
AHN, D
CHUANG, SL
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (01) : 440 - 442
[3] OPTICAL GAIN IN A STRAINED-LAYER QUANTUM-WELL LASER
AHN, D
CHUANG, SL
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (12) : 2400 - 2406
[4] INTERSUBBAND OPTICAL-ABSORPTION IN A QUANTUM-WELL WITH AN APPLIED ELECTRIC-FIELD
AHN, D
CHUANG, SL
[J]. PHYSICAL REVIEW B, 1987, 35 (08): : 4149 - 4151
[5] AHN D, 1987, IEEE J QUANTUM ELECT, V23, P2196
[6] VALENCE-BAND MIXING EFFECTS ON THE GAIN AND THE REFRACTIVE-INDEX CHANGE OF QUANTUM-WELL LASERS
AHN, D
CHUANG, SL
CHANG, YC
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (08) : 4056 - 4064
[7] CALCULATIONS OF HOLE SUBBANDS IN SEMICONDUCTOR QUANTUM WELLS AND SUPERLATTICES
ALTARELLI, M
EKENBERG, U
FASOLINO, A
[J]. PHYSICAL REVIEW B, 1985, 32 (08) : 5138 - 5143
[8] CARRIER LIFETIMES AND LOCALIZATION IN COUPLED GAAS-GAALAS QUANTUM-WELLS IN HIGH ELECTRIC-FIELDS
AUSTIN, EJ
JAROS, M
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (04): : 533 - 541
[9] EXCITON BINDING-ENERGY IN QUANTUM WELLS
BASTARD, G
MENDEZ, EE
CHANG, LL
ESAKI, L
[J]. PHYSICAL REVIEW B, 1982, 26 (04): : 1974 - 1979
[10] EFFECT OF ELECTRIC-FIELDS ON EXCITONS IN A COUPLED DOUBLE-QUANTUM-WELL STRUCTURE
CHEN, YJ
KOTELES, ES
ELMAN, BS
ARMIENTO, CA
[J]. PHYSICAL REVIEW B, 1987, 36 (08): : 4562 - 4565

← 1 2 3 →