APPROACH OF THE INTERPLAY BETWEEN KINETICS AND DIFFUSION IN HOT WALL REACTORS USED IN VPE OF III-V-COMPOUNDS

被引:2
作者
CADORET, R
LAPORTE, JL
HARROUS, M
机构
[1] Univ de Clermont II, Aubiere, Fr, Univ de Clermont II, Aubiere, Fr
关键词
CHEMICAL EQUIPMENT - Reactors - CRYSTALS - Epitaxial Growth - DIFFUSION - Mathematical Models;
D O I
10.1016/0025-5408(86)90055-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Mass transport in a Vapor Phase Epitaxy system is an extremely complex subject. The objective of this paper is to give an approach of the interplay between kinetics and diffusion in a parabolic profile of the velocity over the substrate, when the variation of the growth rate with the axial position is approximately linear, as observed experimentally. The results obtained are applied to the III-V deposition by the chloride and hydride methods. The diffusion of species diluted in a carrier gas is determined by considering a parabolic profile of the gas velocity over the substrate. The coefficients of mass transport of III-V compounds in the chloride and hydride methods are computed.
引用
收藏
页码:1259 / 1267
页数:9
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