MECHANISMS OF SILICON MONOCRYSTALLINE GROWTH FROM SIH4/H-2 AT REDUCED PRESSURES

被引：31

作者：

CADORET, R ^{[1
]}

HOTTIER, F ^{[1
]}

机构：

[1] LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 61卷 / 02期

关键词：

D O I：

10.1016/0022-0248(83)90362-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：259 / 274

页数：16

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