THEORETICAL-ANALYSIS OF EQUILIBRIUM ADSORPTION LAYERS IN CVD SYSTEMS (SI-H-CL, GA-AS-H-CL)

被引：53

作者：

CHERNOV, AA ^{[1
]}

RUSAIKIN, MP ^{[1
]}

机构：

[1] SIBERIAN ENGN PHYS INST,TOMSK,USSR

来源：

关键词：

D O I：

10.1016/0022-0248(78)90417-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：73 / 81

页数：9

共 23 条

[1] Aleksandrov L. N., 1976, Kristall und Technik, V11, P591, DOI 10.1002/crat.19760110603
[2] INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES
ARTHUR, JR
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) : 4032 - &
[3] ACTIVATION-ENERGY FOR MIGRATION ON SILICON (111) FACE
BEDAIR, SM
[J]. SURFACE SCIENCE, 1974, 42 (02) : 595 - 599
[4] Chernov A.A., 1973, ANNU REV MATER SCI, V3, P397
[5] CHERNOV AA, 1978, J JAPAN ASS CRYSTAL, V5, P227
[6] DORFMAN VF, 1974, GAS PHASE MICROMETAL
[7] COVERAGE EFFECTS ON BCF SURFACE DIFFUSION-MODEL
GHEZ, R
[J]. JOURNAL OF CRYSTAL GROWTH, 1974, 22 (04) : 333 - 334
[8] GIVARGIZOV EI, 1977, GROWTH CRYSTALLINE W
[9] THOROUGH THERMODYNAMIC EVALUATION OF SILICON-HYDROGEN-CHLORINE SYSTEM
HUNT, LP
SIRTL, E
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (12) : 1741 - &
[10] KALDIS E, 1976, CRYSTAL GROWTH CHARA