ACTIVATION-ENERGY FOR MIGRATION ON SILICON (111) FACE

[1] SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4673 - &

[2] ALLEN FG, 1961, J PHYS CHEM SOLIDS, V10, P87

[3] ATOMICALLY CLEAN SURFACES BY PULSED LASER BOMBARDMENT [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) : 4776 - &

[4] LASER DEPOSITION AND ORDERING KINETICS OF ALUMINUM ON (111) SILICON SURFACE [J]. SURFACE SCIENCE, 1973, 40 (02) : 419 - 422

[5] DAMASK AC, 1963, POINT DEFECT METALS

[6] A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .3. NUCLEATION RATE MEASUREMENTS AND EFFECT OF OXYGEN ON INITIAL GROWTH BEHAVIOUR [J]. PHILOSOPHICAL MAGAZINE, 1967, 15 (138): : 1167 - &

[7] Lander J.J., 1965, PROGR SOLID STATE CH, V2, P26

[8] CHEMISORPTION AND ORDERED SURFACE STRUCTURES [J]. SURFACE SCIENCE, 1964, 1 (02) : 125 - 164

[9] COMPUTER CALCULATIONS OF SEMICONDUCTOR SURFACE STRUCTURES [J]. SURFACE SCIENCE, 1968, 10 (02) : 215 - &

[10] INFLUENCE OF IMPURITIES ON SURFACE STRUCTURES AND FAULT GENERATION IN HOMOEPITAXIAL SI(111) FILMS [J]. SURFACE SCIENCE, 1971, 25 (02) : 357 - +

[1] SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4673 - &

[2] ALLEN FG, 1961, J PHYS CHEM SOLIDS, V10, P87

[3] ATOMICALLY CLEAN SURFACES BY PULSED LASER BOMBARDMENT [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) : 4776 - &

[4] LASER DEPOSITION AND ORDERING KINETICS OF ALUMINUM ON (111) SILICON SURFACE [J]. SURFACE SCIENCE, 1973, 40 (02) : 419 - 422

[5] DAMASK AC, 1963, POINT DEFECT METALS

[6] A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .3. NUCLEATION RATE MEASUREMENTS AND EFFECT OF OXYGEN ON INITIAL GROWTH BEHAVIOUR [J]. PHILOSOPHICAL MAGAZINE, 1967, 15 (138): : 1167 - &

[7] Lander J.J., 1965, PROGR SOLID STATE CH, V2, P26

[8] CHEMISORPTION AND ORDERED SURFACE STRUCTURES [J]. SURFACE SCIENCE, 1964, 1 (02) : 125 - 164

[9] COMPUTER CALCULATIONS OF SEMICONDUCTOR SURFACE STRUCTURES [J]. SURFACE SCIENCE, 1968, 10 (02) : 215 - &

[10] INFLUENCE OF IMPURITIES ON SURFACE STRUCTURES AND FAULT GENERATION IN HOMOEPITAXIAL SI(111) FILMS [J]. SURFACE SCIENCE, 1971, 25 (02) : 357 - +