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KINETICS OF SILICON DEPOSITION ON SILICON BY PYROLYSIS OF SILANE - MASS-SPECTROMETRIC INVESTIGATION BY MOLECULAR-BEAM SAMPLING
被引:162
作者
:
FARROW, RFC
论文数:
0
引用数:
0
h-index:
0
机构:
MINIST DEF,ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
MINIST DEF,ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
FARROW, RFC
[
1
]
机构
:
[1]
MINIST DEF,ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1974年
/ 121卷
/ 07期
关键词
:
D O I
:
10.1149/1.2401950
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:899 / 907
页数:9
相关论文
共 18 条
[1]
ABBINK EC, 1968, J APPL PHYS, V39, P4673
[2]
EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES
ALLEN, FG
论文数:
0
引用数:
0
h-index:
0
ALLEN, FG
[J].
JOURNAL OF APPLIED PHYSICS,
1957,
28
(12)
: 1510
-
1511
[3]
INFLUENCE OF ASH3, PH3, AND B2H6 ON GROWTH-RATE AND RESISTIVITY OF POLYCRYSTALLINE SILICON FILMS DEPOSITED FROM A SIH4-H2 MIXTURE
EVERSTEY.FC
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
EVERSTEY.FC
PUT, BH
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PUT, BH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(01)
: 106
-
110
[4]
A CHEMICAL POLISH METHOD FOR PREPARATION OF SILICON SUBSTRATES FOR EPITAXIAL DEPOSITION
FAIRHURST, KM
论文数:
0
引用数:
0
h-index:
0
FAIRHURST, KM
RICH, GJ
论文数:
0
引用数:
0
h-index:
0
RICH, GJ
[J].
MICROELECTRONICS RELIABILITY,
1966,
5
(01)
: 15
-
+
[5]
INHIBITION OF SILICON GROWTH RATE DURING DEPOSITION OF ARSENIC-DOPED EPITAXIAL SILICON LAYERS ON SILICON BY PYROLYSIS OF SILANE
FARROW, RFC
论文数:
0
引用数:
0
h-index:
0
FARROW, RFC
FILBY, JD
论文数:
0
引用数:
0
h-index:
0
FILBY, JD
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(01)
: 149
-
&
[6]
GUPTA DC, 1972, J ELECTRON MATER, V1, P371
[7]
SILICON HOMOEPITAXIAL THIN-FILMS VIA SILANE PYROLYSIS - HEED AND AUGER-ELECTRON SPECTROSCOPY STUDY
HENDERSON, RC
论文数:
0
引用数:
0
h-index:
0
HENDERSON, RC
HELM, RF
论文数:
0
引用数:
0
h-index:
0
HELM, RF
[J].
SURFACE SCIENCE,
1972,
30
(02)
: 310
-
+
[8]
HIRTH JP, 1963, CONDENSATION EVAPORA, V11
[9]
DOPING OF EPITAXIAL SILICON
HURLE, DTJ
论文数:
0
引用数:
0
h-index:
0
HURLE, DTJ
FARROW, RFC
论文数:
0
引用数:
0
h-index:
0
FARROW, RFC
LOGAN, RM
论文数:
0
引用数:
0
h-index:
0
LOGAN, RM
[J].
JOURNAL OF CRYSTAL GROWTH,
1972,
12
(01)
: 73
-
&
[10]
INFLUENCE OF SUBSTRATE SURFACE CONDITIONS ON NUCLEATION AND GROWTH OF EPITAXIAL SILICON FILMS
JOYCE, BA
论文数:
0
引用数:
0
h-index:
0
机构:
Alien Clark Research Centre, The Plessey Company Limited, Caswell, Towcester, Northants. England
JOYCE, BA
NEAVE, JH
论文数:
0
引用数:
0
h-index:
0
机构:
Alien Clark Research Centre, The Plessey Company Limited, Caswell, Towcester, Northants. England
NEAVE, JH
WATTS, BE
论文数:
0
引用数:
0
h-index:
0
机构:
Alien Clark Research Centre, The Plessey Company Limited, Caswell, Towcester, Northants. England
WATTS, BE
[J].
SURFACE SCIENCE,
1969,
15
(01)
: 1
-
&
←
1
2
→
共 18 条
[1]
ABBINK EC, 1968, J APPL PHYS, V39, P4673
[2]
EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES
ALLEN, FG
论文数:
0
引用数:
0
h-index:
0
ALLEN, FG
[J].
JOURNAL OF APPLIED PHYSICS,
1957,
28
(12)
: 1510
-
1511
[3]
INFLUENCE OF ASH3, PH3, AND B2H6 ON GROWTH-RATE AND RESISTIVITY OF POLYCRYSTALLINE SILICON FILMS DEPOSITED FROM A SIH4-H2 MIXTURE
EVERSTEY.FC
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
EVERSTEY.FC
PUT, BH
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PUT, BH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(01)
: 106
-
110
[4]
A CHEMICAL POLISH METHOD FOR PREPARATION OF SILICON SUBSTRATES FOR EPITAXIAL DEPOSITION
FAIRHURST, KM
论文数:
0
引用数:
0
h-index:
0
FAIRHURST, KM
RICH, GJ
论文数:
0
引用数:
0
h-index:
0
RICH, GJ
[J].
MICROELECTRONICS RELIABILITY,
1966,
5
(01)
: 15
-
+
[5]
INHIBITION OF SILICON GROWTH RATE DURING DEPOSITION OF ARSENIC-DOPED EPITAXIAL SILICON LAYERS ON SILICON BY PYROLYSIS OF SILANE
FARROW, RFC
论文数:
0
引用数:
0
h-index:
0
FARROW, RFC
FILBY, JD
论文数:
0
引用数:
0
h-index:
0
FILBY, JD
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(01)
: 149
-
&
[6]
GUPTA DC, 1972, J ELECTRON MATER, V1, P371
[7]
SILICON HOMOEPITAXIAL THIN-FILMS VIA SILANE PYROLYSIS - HEED AND AUGER-ELECTRON SPECTROSCOPY STUDY
HENDERSON, RC
论文数:
0
引用数:
0
h-index:
0
HENDERSON, RC
HELM, RF
论文数:
0
引用数:
0
h-index:
0
HELM, RF
[J].
SURFACE SCIENCE,
1972,
30
(02)
: 310
-
+
[8]
HIRTH JP, 1963, CONDENSATION EVAPORA, V11
[9]
DOPING OF EPITAXIAL SILICON
HURLE, DTJ
论文数:
0
引用数:
0
h-index:
0
HURLE, DTJ
FARROW, RFC
论文数:
0
引用数:
0
h-index:
0
FARROW, RFC
LOGAN, RM
论文数:
0
引用数:
0
h-index:
0
LOGAN, RM
[J].
JOURNAL OF CRYSTAL GROWTH,
1972,
12
(01)
: 73
-
&
[10]
INFLUENCE OF SUBSTRATE SURFACE CONDITIONS ON NUCLEATION AND GROWTH OF EPITAXIAL SILICON FILMS
JOYCE, BA
论文数:
0
引用数:
0
h-index:
0
机构:
Alien Clark Research Centre, The Plessey Company Limited, Caswell, Towcester, Northants. England
JOYCE, BA
NEAVE, JH
论文数:
0
引用数:
0
h-index:
0
机构:
Alien Clark Research Centre, The Plessey Company Limited, Caswell, Towcester, Northants. England
NEAVE, JH
WATTS, BE
论文数:
0
引用数:
0
h-index:
0
机构:
Alien Clark Research Centre, The Plessey Company Limited, Caswell, Towcester, Northants. England
WATTS, BE
[J].
SURFACE SCIENCE,
1969,
15
(01)
: 1
-
&
←
1
2
→