DOPING OF EPITAXIAL SILICON

被引：14

作者：

HURLE, DTJ

FARROW, RFC

LOGAN, RM

机构：

来源：

关键词：

D O I：

10.1016/0022-0248(72)90343-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：73 / &

共 10 条

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[6] DOPING OF EPITAXIAL SILICON FILMS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (05) : 541 - &
[7] PHOSPHORUS AND ARSENIC DOPING OF EPITAXIAL SILICON FILMS IN 1000 DEGREES TO 1200 DEGREES C TEMPERATURE RANGE
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (09) : 1271 - &
[8] SOLID SOLUBILITIES OF IMPURITY ELEMENTS IN GERMANIUM AND SILICON
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[J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01): : 205 - 233
[9] WAGMAN DD, 1965, NBS2701 TECH NOT
[10] WEISER K, 1958, J PHYS CHEM SOLIDS, V1, P118