DOPING OF EPITAXIAL SILICON FILMS

[1] Bradshaw S.E., 1956, J ELECTRON, V2, P134

[2] DIFFUSION OF PHOSPHORUS INTO SILICON UNDER CONDITIONS OF CONTROLLED VAPOUR PRESSURE [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1959, 73 (472): : 577 - 584

[3] THE DEPENDENCE ON DEPOSITION CONDITIONS OF THE DOPANT CONCENTRATION OF EPITAXIAL SILICON LAYERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (03) : 317 - 323

[4] RAICHOUDHURY P, 1966, MAY CLEV M SOC

[5] VAPOR PHASE DEPOSITION AND ETCHING OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) : 988 - &

[6] STULL, 1956, THERMODYNAMIC PROPER

[7] WANG P, 1964, AD601343 USG RES REP

[8] JANAF THERMOCHEMICAL

[1] Bradshaw S.E., 1956, J ELECTRON, V2, P134

[2] DIFFUSION OF PHOSPHORUS INTO SILICON UNDER CONDITIONS OF CONTROLLED VAPOUR PRESSURE [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1959, 73 (472): : 577 - 584

[3] THE DEPENDENCE ON DEPOSITION CONDITIONS OF THE DOPANT CONCENTRATION OF EPITAXIAL SILICON LAYERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (03) : 317 - 323

[4] RAICHOUDHURY P, 1966, MAY CLEV M SOC

[5] VAPOR PHASE DEPOSITION AND ETCHING OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) : 988 - &

[6] STULL, 1956, THERMODYNAMIC PROPER

[7] WANG P, 1964, AD601343 USG RES REP

[8] JANAF THERMOCHEMICAL