PHOSPHORUS AND ARSENIC DOPING OF EPITAXIAL SILICON FILMS IN 1000 DEGREES TO 1200 DEGREES C TEMPERATURE RANGE

被引：16

作者：

SWANSON, TB

TUCKER, RN

机构：

[1] Research and Development Laboratory, Fairchild Semiconductor, Palo Alto, California

[2] Applied Materials Technology, Santa Clara, California

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1969年 / 116卷 / 09期

关键词：

D O I：

10.1149/1.2412296

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The doping of silane grown epitaxial films has been studied in the 1000°-1200°C temperature range. Dopant sources were PH3 and AsH3. It is found that a gas phase equilibrium between the dimer (P2 or As2) and monomer (P or As) species occurs. The monomer is responsible for doping the silicon and does so in accordance with Henry's law. Reasonable agreement between the calculated and experimental doping concentration has been obtained. © 1969, The Electrochemical Society, Inc. All rights reserved.

引用

页码：1271 / &