TRANSIENT CURRENT TRAP SPECTROSCOPY (TCTS) IN GAAS-GAALAS HETEROJUNCTIONS

被引：7

作者：

BALLAND, B

BLONDEAU, R

PINARD, P

机构：

[1] Laboratoire de Physique de la Matière, Equipe de recherche associee au CNRS. Institut National des Sciences Appliquees de Lyon, 69621 Villeurbanne Cedex, 20, Avenue Albert Einstein

来源：

SOLID STATE COMMUNICATIONS | 1978年 / 26卷 / 11期

关键词：

D O I：

10.1016/0038-1098(78)90718-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this paper, we have shown that it is possible to do a full study of deep centers in double heterojunction LED using spectral analysis of transient current. Traps are characterized by their apparent physical parameters (activation energy, concentration, capture cross section). © 1978.

引用

页码：679 / 683

页数：5

共 15 条

[1] BALLAND B, UNPUBLISHED
[2] BALLAND B, 1976, PE750813 ACT CONC
[3] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP
HENRY, CH
LANG, DV
[J]. PHYSICAL REVIEW B, 1977, 15 (02): : 989 - 1016
[4] IKOMA T, 1975, JAP J APPL PHYS, V12, P1011
[5] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
[6] ELECTRON TRAPS IN BULK AND EPITAXIAL GAAS CRYSTALS
MARTIN, GM
MITONNEAU, A
MIRCEA, A
[J]. ELECTRONICS LETTERS, 1977, 13 (07) : 191 - 193
[7] MASHIN SV, 1970, SOV PHYS SEMICOND, V4, P1171
[8] MIRCEA A, 1977, J PHYS ORSAY, V38, P41
[9] HOLE TRAPS IN BULK AND EPITAXIAL GAAS CRYSTALS
MITONNEAU, A
MARTIN, GM
MIRCEA, A
[J]. ELECTRONICS LETTERS, 1977, 13 (22) : 666 - 668
[10] HETEROSTRUCTURE INJECTION-LASERS
PANISH, MB
[J]. PROCEEDINGS OF THE IEEE, 1976, 64 (10) : 1512 - 1540

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