PHOTOCURRENT SATURATION IN SHORT-PERIOD SUPERLATTICE MODULATORS

被引:3
作者
GOOSSEN, KW
ZUCKER, JE
JOSEPH, IB
KUO, JM
KOPF, RM
MILLER, DAB
CHEMLA, DS
机构
[1] AT & T Bell Laboratories, Holmdel
关键词
Modulation; Optical communications;
D O I
10.1049/el:19900480
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The effects of high intensity illumination on short-period superlattice modulators at room temperature are examined using photocurrent techniques. Our measurements indicate a zero bias saturation intensity of 6-5kW/cm2, considerably higher than in conventional quantum well structures with thick ~ 100 A barriers, but lower for quantum wells with thin barriers. For moderate DC bias the change in photocurrent with applied voltage remains higheven at high intensity. This implies that superlattices are useful as high-intensity optical modulators. © 1990, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码:736 / 737
页数:2
相关论文
共 6 条
[1]   ROOM-TEMPERATURE ELECTROABSORPTION AND SWITCHING IN A GAAS/ALGAAS SUPERLATTICE [J].
BARJOSEPH, I ;
GOOSSEN, KW ;
KUO, JM ;
KOPF, RF ;
MILLER, DAB ;
CHEMLA, DS .
APPLIED PHYSICS LETTERS, 1989, 55 (04) :340-342
[2]   ELECTRIC-FIELD INDUCED LOCALIZATION AND OSCILLATORY ELECTRO-OPTICAL PROPERTIES OF SEMICONDUCTOR SUPERLATTICES [J].
BLEUSE, J ;
BASTARD, G ;
VOISIN, P .
PHYSICAL REVIEW LETTERS, 1988, 60 (03) :220-223
[3]  
FOX AM, IN PRESS APPL PHYS L
[4]  
FOX AM, 1989, 1989 P OSA ANN M, V18, P21
[5]   STARK LOCALIZATION IN GAAS-GAALAS SUPERLATTICES UNDER AN ELECTRIC-FIELD [J].
MENDEZ, EE ;
AGULLORUEDA, F ;
HONG, JM .
PHYSICAL REVIEW LETTERS, 1988, 60 (23) :2426-2429
[6]   ELECTRIC-FIELD DEPENDENCE OF OPTICAL-ABSORPTION NEAR THE BAND-GAP OF QUANTUM-WELL STRUCTURES [J].
MILLER, DAB ;
CHEMLA, DS ;
DAMEN, TC ;
GOSSARD, AC ;
WIEGMANN, W ;
WOOD, TH ;
BURRUS, CA .
PHYSICAL REVIEW B, 1985, 32 (02) :1043-1060