STARK LOCALIZATION IN GAAS-GAALAS SUPERLATTICES UNDER AN ELECTRIC-FIELD

被引：818

作者：

MENDEZ, EE

AGULLORUEDA, F

HONG, JM

机构：

来源：

PHYSICAL REVIEW LETTERS | 1988年 / 60卷 / 23期

关键词：

D O I：

10.1103/PhysRevLett.60.2426

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：2426 / 2429

页数：4

相关论文

共 12 条

[1] BASTARD G, IN PRESS NATO ADV B, V179
[2] ELECTRIC-FIELD INDUCED LOCALIZATION AND OSCILLATORY ELECTRO-OPTICAL PROPERTIES OF SEMICONDUCTOR SUPERLATTICES
BLEUSE, J
BASTARD, G
VOISIN, P
[J]. PHYSICAL REVIEW LETTERS, 1988, 60 (03) : 220 - 223
[3] ELECTRIC-FIELD-INDUCED DISSOCIATION OF EXCITONS IN SEMICONDUCTOR QUANTUM WELLS
BRUMJA
BASTARD, G
[J]. PHYSICAL REVIEW B, 1985, 31 (06): : 3893 - 3898
[4] EFFECT OF ELECTRIC-FIELDS ON EXCITONS IN A COUPLED DOUBLE-QUANTUM-WELL STRUCTURE
CHEN, YJ
KOTELES, ES
ELMAN, BS
ARMIENTO, CA
[J]. PHYSICAL REVIEW B, 1987, 36 (08): : 4562 - 4565
[5] EXCITON BINDING-ENERGY IN SMALL-PERIOD GAAS/GA(1-X)ALXAS SUPERLATTICES
CHOMETTE, A
LAMBERT, B
DEVEAUD, B
CLEROT, F
REGRENY, A
BASTARD, G
[J]. EUROPHYSICS LETTERS, 1987, 4 (04): : 461 - 466
[6] EXISTENCE OF WANNIER-STARK LOCALIZATION
EMIN, D
HART, CF
[J]. PHYSICAL REVIEW B, 1987, 36 (14): : 7353 - 7359
[7] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS
ESAKI, L
TSU, R
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) : 61 - &
[8] STARK-EFFECT IN ALXGA1-XAS GAAS COUPLED QUANTUM-WELLS
LE, HQ
ZAYHOWSKI, JJ
GOODHUE, WD
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (21) : 1518 - 1520
[9] EXCITON BINDING-ENERGIES FROM AN ENVELOPE-FUNCTION ANALYSIS OF DATA ON NARROW QUANTUM-WELLS OF INTEGRAL MONOLAYER WIDTHS IN AL0.4GA0.6AS/GAAS
NELSON, DF
MILLER, RC
TU, CW
SPUTZ, SK
[J]. PHYSICAL REVIEW B, 1987, 36 (15): : 8063 - 8070
[10] ELECTRIC-FIELD-INDUCED RAMAN-SCATTERING - RESONANCE, TEMPERATURE, AND SCREENING EFFECTS
SCHAFFLER, F
ABSTREITER, G
[J]. PHYSICAL REVIEW B, 1986, 34 (06): : 4017 - 4025