ELECTRIC-FIELD-INDUCED RAMAN-SCATTERING - RESONANCE, TEMPERATURE, AND SCREENING EFFECTS

被引:32
作者
SCHAFFLER, F [1 ]
ABSTREITER, G [1 ]
机构
[1] TECH UNIV MUNICH,DEPT PHYS E16,D-8046 GARCHING,FED REP GER
来源
PHYSICAL REVIEW B | 1986年 / 34卷 / 06期
关键词
D O I
10.1103/PhysRevB.34.4017
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:4017 / 4025
页数:9
相关论文
共 34 条
[1]  
ABSTREITER G, 1984, TOPICS APPLIED PHYSI, V54
[2]   DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1983, 27 (02) :985-1009
[3]   IMPACT IONIZATION OF EXCITONS IN GAAS [J].
BLUDAU, W ;
WAGNER, E .
PHYSICAL REVIEW B, 1976, 13 (12) :5410-5414
[4]   CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES [J].
BRILLSON, LJ ;
BACHRACH, RZ ;
BAUER, RS ;
MCMENAMIN, J .
PHYSICAL REVIEW LETTERS, 1979, 42 (06) :397-401
[5]   INSITU INVESTIGATION OF BAND BENDING DURING FORMATION OF GAAS-GE HETEROSTRUCTURES [J].
BRUGGER, H ;
SCHAFFLER, F ;
ABSTREITER, G .
PHYSICAL REVIEW LETTERS, 1984, 52 (02) :141-144
[6]  
CARDONA M, 1982, TOPICS APPLIED PHYSI, V30
[7]   ELECTRIC-FIELD-INDUCED RAMAN SCATTERING IN SRTIO3 AND KTAO3 [J].
FLEURY, PA ;
WORLOCK, JM .
PHYSICAL REVIEW, 1968, 174 (02) :613-&
[8]  
FRANKL DR, 1967, ELECTRONIC PROPERTIE
[9]  
FRANZ W, 1958, Z NATURFORSCH PT A, V13, P484
[10]  
GAY JG, 1971, LIGHT SCATTERING SOL