LOW-ENERGY ION-ASSISTED EPITAXY OF INGAASSB ON INP (100)

InGaAsSb alloys were grown within the solid-phase miscibility gap, lattice matched to InP (100) substrates, using ion-assisted deposition. The alloy structure and properties were strongly dependent upon the energy E of Ar ions bombarding the growing film. Films deposited with E less-than-or-equal-to 16 eV exhibited multiple (400) x-ray diffraction peaks and relatively low electron mobilities, indicating that there was significant alloy decomposition. Increasing E to 19-21 eV yielded single, sharp (400) x-ray peaks and increased the electron mobility, showing that ion irradiation suppressed decomposition. E > 22 eV resulted in ion damage as indicated by decreased mobilities and broadening of the x-ray peaks.