NON-LOCALIZED IMPACT IONIZATION USING A MODIFIED LUCKY DRIFT THEORY

被引：8

作者：

CHILDS, PA

机构：

[1] Univ of Surrey, Guildford, Engl, Univ of Surrey, Guildford, Engl

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1987年 / 20卷 / 13期

关键词：

LOGIC DEVICES;

D O I：

10.1088/0022-3719/20/13/006

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The lucky drift theory developed by B. K. Ridley is modified to include the effect of field variation over the 'dead space'. The new theory is applicable to small-geometry logic devices for which the total energy available from the supply voltage is comparable to the ionization threshold energy. It is shown that the new theory predicts a substantially lower level of multiplication than do conventional theories based on an ionization coefficient.

引用

页码：L243 / L247

页数：5

共 6 条

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[4]

OKUTO Y, 1974, PHYS REV, V102, P369

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