A TEST OF THE LUCKY-DRIFT THEORY OF THE IMPACT IONIZATION COEFFICIENT USING MONTE-CARLO SIMULATION

被引:41
作者
MCKENZIE, S
BURT, MG
机构
[1] UNIV LONDON,ROYAL HOLLOWAY & NEW BEDFORD,DEPT CHEM,EGHAM TW20 0EX,ENGLAND
[2] BRITISH TELECOM RES LABS,IPSWICH IP5 7RE,SUFFOLK,ENGLAND
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1986年 / 19卷 / 12期
关键词
D O I
10.1088/0022-3719/19/12/010
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:1959 / 1973
页数:15
相关论文
共 10 条
[1]   DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J].
BARAFF, GA .
PHYSICAL REVIEW, 1962, 128 (06) :2507-&
[2]   THEORY OF HIGH-FIELD TRANSPORT OF HOLES IN GAAS AND INP [J].
BRENNAN, K ;
HESS, K .
PHYSICAL REVIEW B, 1984, 29 (10) :5581-5590
[3]   AN ALTERNATIVE EXPRESSION FOR THE IMPACT IONIZATION COEFFICIENT IN A SEMICONDUCTOR DERIVED USING LUCKY DRIFT THEORY [J].
BURT, MG .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (16) :L477-L481
[4]  
CAPASSO F, 1986, SEMICONDUCTORS SEM D, V22, P1
[5]   MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J].
FAWCETT, W ;
BOARDMAN, AD ;
SWAIN, S .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) :1963-&
[6]   VELOCITY-FIELD CHARACTERISTICS OF GAAS WITH GAMMA-6(C)-L6(C)-X6(C) CONDUCTION-BAND ORDERING [J].
LITTLEJOHN, MA ;
HAUSER, JR ;
GLISSON, TH .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) :4587-4590
[7]   A MODEL FOR IMPACT IONIZATION IN WIDE-GAP SEMICONDUCTORS [J].
RIDLEY, BK .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (23) :4733-4751
[8]   LUCKY-DRIFT MECHANISM FOR IMPACT IONIZATION IN SEMICONDUCTORS [J].
RIDLEY, BK .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (17) :3373-3388
[9]   BAND-STRUCTURE-DEPENDENT TRANSPORT AND IMPACT IONIZATION IN GAAS [J].
SHICHIJO, H ;
HESS, K .
PHYSICAL REVIEW B, 1981, 23 (08) :4197-4207
[10]   PROBLEMS RELATED TO P-N JUNCTIONS IN SILICON [J].
SHOCKLEY, W .
SOLID-STATE ELECTRONICS, 1961, 2 (01) :35-+