A MODEL FOR IMPACT IONIZATION IN WIDE-GAP SEMICONDUCTORS

[1] ANDERSON CC, 1972, PHYS REV, V85, P2267

[2] IONIZATION COEFFICIENT MEASUREMENT IN GAAS BY USING MULTIPLICATION NOISE CHARACTERISTICS [J]. SOLID-STATE ELECTRONICS, 1981, 24 (07) : 629 - 634

[3] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1962, 128 (06): : 2507 - &

[4] BIR GL, 1961, SOV PHYS-SOL STATE, V2, P2039

[5] INTERVALLEY-SCATTERING SELECTION RULES IN 3-V SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1966, 145 (02): : 620 - &

[6] ENHANCEMENT OF ELECTRON-IMPACT IONIZATION IN A SUPER-LATTICE - A NEW AVALANCHE PHOTO-DIODE WITH A LARGE IONIZATION RATE RATIO [J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 38 - 40

[7] HOT-ELECTRON DYNAMICS IN GAAS AVALANCHE DEVICES - COMPETITION BETWEEN BALLISTIC BEHAVIOR AND INTERVALLEY SCATTERING [J]. SOLID-STATE ELECTRONICS, 1979, 22 (11) : 977 - 979

[8] THE EFFECT OF COLLISIONAL BROADENING ON MONTE-CARLO SIMULATIONS OF HIGH-FIELD TRANSPORT IN SEMICONDUCTOR-DEVICES [J]. ELECTRON DEVICE LETTERS, 1981, 2 (11): : 295 - 297

[9] SIMULATION OF HIGH-FIELD TRANSPORT IN GAAS USING A MONTE-CARLO METHOD AND PSEUDOPOTENTIAL BAND STRUCTURES - BAND-STRUCTURE DEPENDENT TRANSPORT AND IMPACT IONIZATION IN GAAS - COMMENT [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3324 - 3326

[10] Conwell E M, 1967, HIGH FIELD TRANSPORT

[1] ANDERSON CC, 1972, PHYS REV, V85, P2267

[2] IONIZATION COEFFICIENT MEASUREMENT IN GAAS BY USING MULTIPLICATION NOISE CHARACTERISTICS [J]. SOLID-STATE ELECTRONICS, 1981, 24 (07) : 629 - 634

[3] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1962, 128 (06): : 2507 - &

[4] BIR GL, 1961, SOV PHYS-SOL STATE, V2, P2039

[5] INTERVALLEY-SCATTERING SELECTION RULES IN 3-V SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1966, 145 (02): : 620 - &

[6] ENHANCEMENT OF ELECTRON-IMPACT IONIZATION IN A SUPER-LATTICE - A NEW AVALANCHE PHOTO-DIODE WITH A LARGE IONIZATION RATE RATIO [J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 38 - 40

[7] HOT-ELECTRON DYNAMICS IN GAAS AVALANCHE DEVICES - COMPETITION BETWEEN BALLISTIC BEHAVIOR AND INTERVALLEY SCATTERING [J]. SOLID-STATE ELECTRONICS, 1979, 22 (11) : 977 - 979

[8] THE EFFECT OF COLLISIONAL BROADENING ON MONTE-CARLO SIMULATIONS OF HIGH-FIELD TRANSPORT IN SEMICONDUCTOR-DEVICES [J]. ELECTRON DEVICE LETTERS, 1981, 2 (11): : 295 - 297

[9] SIMULATION OF HIGH-FIELD TRANSPORT IN GAAS USING A MONTE-CARLO METHOD AND PSEUDOPOTENTIAL BAND STRUCTURES - BAND-STRUCTURE DEPENDENT TRANSPORT AND IMPACT IONIZATION IN GAAS - COMMENT [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3324 - 3326

[10] Conwell E M, 1967, HIGH FIELD TRANSPORT