THE EFFECT OF COLLISIONAL BROADENING ON MONTE-CARLO SIMULATIONS OF HIGH-FIELD TRANSPORT IN SEMICONDUCTOR-DEVICES

被引：30

作者：

CAPASSO, F

PEARSALL, TP

THORNBER, KK

机构：

来源：

ELECTRON DEVICE LETTERS | 1981年 / 2卷 / 11期

关键词：

D O I：

10.1109/EDL.1981.25439

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：295 / 297

页数：3

共 16 条

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