A MODEL FOR IMPACT IONIZATION IN WIDE-GAP SEMICONDUCTORS

[11] ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN INP DETERMINED BY PHOTOMULTIPLICATION MEASUREMENTS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 589 - 591

[12] SCATTERING OF ELECTRONS BY LATTICE VIBRATIONS IN NONPOLAR CRYSTALS [J]. PHYSICAL REVIEW, 1956, 104 (05): : 1281 - 1290

[13] TRANSPORT AND DEFORMATION-POTENTIAL THEORY FOR MANY-VALLEY SEMICONDUCTORS WITH ANISOTROPIC SCATTERING [J]. PHYSICAL REVIEW, 1956, 101 (03): : 944 - 961

[14] Hess K., 1981, IEEE Electron Device Letters, VEDL-2, P297, DOI 10.1109/EDL.1981.25440

[15] SIMULATION OF HIGH-FIELD TRANSPORT IN GAAS USING A MONTE-CARLO METHOD AND PSEUDOPOTENTIAL BAND STRUCTURES - BAND-STRUCTURE DEPENDENT TRANSPORT AND IMPACT IONIZATION IN GAAS - REPLY [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3327 - 3329

[16] GA1-XALXSB AVALANCHE PHOTO-DIODES - RESONANT IMPACT IONIZATION WITH VERY HIGH RATIO OF IONIZATION COEFFICIENTS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 284 - 288

[17] KAO CW, 1980, SOLID STATE ELECTRON, V23, P881, DOI 10.1016/0038-1101(80)90106-9

[18] IMPACT IONIZATION IN GA1-XALXSB - AN ALTERNATIVE INTERPRETATION [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (09) : 1595 - 1597

[19] III-V ALLOY HETEROSTRUCTURE HIGH-SPEED AVALANCHE PHOTO-DIODES [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (07) : 549 - 558

[20] INTERBAND SCATTERING EFFECTS ON SECONDARY IONIZATION COEFFICIENTS IN GAAS [J]. SOLID-STATE ELECTRONICS, 1978, 21 (02) : 331 - 340

[11] ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN INP DETERMINED BY PHOTOMULTIPLICATION MEASUREMENTS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 589 - 591

[12] SCATTERING OF ELECTRONS BY LATTICE VIBRATIONS IN NONPOLAR CRYSTALS [J]. PHYSICAL REVIEW, 1956, 104 (05): : 1281 - 1290

[13] TRANSPORT AND DEFORMATION-POTENTIAL THEORY FOR MANY-VALLEY SEMICONDUCTORS WITH ANISOTROPIC SCATTERING [J]. PHYSICAL REVIEW, 1956, 101 (03): : 944 - 961

[14] Hess K., 1981, IEEE Electron Device Letters, VEDL-2, P297, DOI 10.1109/EDL.1981.25440

[15] SIMULATION OF HIGH-FIELD TRANSPORT IN GAAS USING A MONTE-CARLO METHOD AND PSEUDOPOTENTIAL BAND STRUCTURES - BAND-STRUCTURE DEPENDENT TRANSPORT AND IMPACT IONIZATION IN GAAS - REPLY [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3327 - 3329

[16] GA1-XALXSB AVALANCHE PHOTO-DIODES - RESONANT IMPACT IONIZATION WITH VERY HIGH RATIO OF IONIZATION COEFFICIENTS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 284 - 288

[17] KAO CW, 1980, SOLID STATE ELECTRON, V23, P881, DOI 10.1016/0038-1101(80)90106-9

[18] IMPACT IONIZATION IN GA1-XALXSB - AN ALTERNATIVE INTERPRETATION [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (09) : 1595 - 1597

[19] III-V ALLOY HETEROSTRUCTURE HIGH-SPEED AVALANCHE PHOTO-DIODES [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (07) : 549 - 558

[20] INTERBAND SCATTERING EFFECTS ON SECONDARY IONIZATION COEFFICIENTS IN GAAS [J]. SOLID-STATE ELECTRONICS, 1978, 21 (02) : 331 - 340