ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN INP DETERMINED BY PHOTOMULTIPLICATION MEASUREMENTS

被引：152

作者：

COOK, LW

BULMAN, GE

STILLMAN, GE

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 07期

关键词：

D O I：

10.1063/1.93190

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：589 / 591

页数：3

相关论文

共 7 条

[1] [Anonymous], 1977, SEMICONDUCTORS SEMIM
[2] IONIZATION COEFFICIENTS OF ELECTRONS AND HOLES IN INP
ARMIENTO, CA
GROVES, SH
HURWITZ, CE
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (04) : 333 - 335
[3] THE EFFECT OF ELECTRO-ABSORPTION ON THE DETERMINATION OF IONIZATION COEFFICIENTS
BULMAN, GE
COOK, LW
STILLMAN, GE
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 813 - 815
[4] ELECTRON AND HOLE IONIZATION RATES IN EPITAXIAL SILICON AT HIGH ELECTRIC-FIELDS
GRANT, WN
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (10) : 1189 - 1203
[5] KAO CW, 1980, SOLID STATE ELECTRON, V23, P881, DOI 10.1016/0038-1101(80)90106-9
[6] IONIZATION COEFFICIENTS MEASURED IN ABRUPT INP JUNCTIONS
UMEBU, I
CHOUDHURY, ANMM
ROBSON, PN
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 302 - 303
[7] USE OF A SCHOTTKY-BARRIER TO MEASURE IMPACT IONIZATION COEFFICIENTS IN SEMICONDUCTORS
WOODS, MH
JOHNSON, WC
LAMPERT, MA
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (03) : 381 - 394