IONIZATION COEFFICIENTS MEASURED IN ABRUPT INP JUNCTIONS

被引：84

作者：

UMEBU, I ^{[1
]}

CHOUDHURY, ANMM ^{[1
]}

ROBSON, PN ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 04期

关键词：

D O I：

10.1063/1.91470

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：302 / 303

页数：2

共 11 条

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[5]

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[7]

ITO M, 1978, AUT P NAT C APPL PHY

[8]

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[9] SUBSTRATE DEPENDENCE OF INP MESFET PERFORMANCE [J].

MORKOC, H ;

ANDREWS, JT ;

HYDER, SB .

ELECTRONICS LETTERS, 1978, 14 (22) :715-716

[10] INGAASP HETEROSTRUCTURE AVALANCHE PHOTO-DIODES WITH HIGH AVALANCHE GAIN [J].

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APPLIED PHYSICS LETTERS, 1979, 35 (03) :251-253

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