GA1-XALXSB AVALANCHE PHOTO-DIODES - RESONANT IMPACT IONIZATION WITH VERY HIGH RATIO OF IONIZATION COEFFICIENTS

被引：152

作者：

HILDEBRAND, O

KUEBART, W

BENZ, KW

PILKUHN, MH

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1981年 / 17卷 / 02期

关键词：

D O I：

10.1109/JQE.1981.1071068

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：284 / 288

页数：5

共 31 条

[1] THRESHOLD ENERGIES FOR ELECTRON-HOLE PAIR PRODUCTION BY IMPACT IONIZATION IN SEMICONDUCTORS [J].

ANDERSON, CL ;

CROWELL, CR .

PHYSICAL REVIEW B, 1972, 5 (06) :2267-&

[2]

ANDERSON SJ, 1977, 33B I PHYS C SER, P346

[3] TUNNELING CURRENT IN INGAAS AND OPTIMUM DESIGN FOR INGAAS-INP AVALANCHE PHOTO-DIODE [J].

ANDO, H ;

KANBE, H ;

ITO, M ;

KANEDA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) :L277-L280

[4] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J].

BARAFF, GA .

PHYSICAL REVIEW, 1962, 128 (06) :2507-&

[5]

BENZ KW, UNPUBLISHED

[6] VERY HIGH QUANTUM EFFICIENCY GASB MESA PHOTODETECTORS BETWEEN 1.3 AND 1.6-MU-M [J].

CAPASSO, F ;

PANISH, MB ;

SUMSKI, S ;

FOY, PW .

APPLIED PHYSICS LETTERS, 1980, 36 (02) :165-167

[7] PHOTOCONDUCTIVITY ASSOCIATED WITH LANDAU STRUCTURE IN GASB [J].

FILION, A ;

FORTIN, E .

PHYSICAL REVIEW B, 1973, 8 (08) :3852-3860

[8] LIQUID-PHASE EPITAXY OF INP [J].

HESS, K ;

STATH, N ;

BENZ, KW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (09) :1208-1212

[9] GAINASP-INP AVALANCHE PHOTO-DIODES [J].

HURWITZ, CE ;

HSIEH, JJ .

APPLIED PHYSICS LETTERS, 1978, 32 (08) :487-489

[10] AN N+-N-P GERMANIUM AVALANCHE PHOTO-DIODE [J].

KANEDA, T ;

KAGAWA, S ;

MIKAWA, T ;

TOYAMA, Y ;

ANDO, H .

APPLIED PHYSICS LETTERS, 1980, 36 (07) :572-574

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